Measurement on Snapback Holding Voltage of High-Voltage LDMOS for Latch-Up Consideration
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Figure 1 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
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Impact from IC On-Chip Protection Design on EOS - In Compliance Magazine
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
TLP measurement of ESD Protection Devices - iST-Integrated Service Technology - TLP measurement of ESD Protection Devices
TLP Analysis Doesn't Guarantee Compliance to ESD Standards?
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Influence of high-frequent signals on the hold current behaviour of snapback ESD protection diodes - YouTube
Time to say farewell to the snapback ggNMOS for ESD protection – SOFICS – Solutions for ICs
2 Snap-back I-V characteristic of common ESD device. | Download Scientific Diagram
Snapback behavior determines ESD protection effectiveness - SemiWiki
Basics in ESD Protection of Radio Frequency Integrated Circuits | SpringerLink
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
What does good ESD protection look like? | Efficiency Wins
Snap-back I-V characteristic of common ESD device. | Download Scientific Diagram
Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
